Radio frequency module and communication device

ABSTRACT

A radio frequency module including a module substrate including a first principal surface and a second principal surface; a power amplifier; an inductor disposed on the second principal surface and connected to the power amplifier; and an external connection terminal configured to receive a power supply voltage. The first external connection terminal is disposed on the second principal surface and connected to the power amplifier via the inductor.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is based on and claims priority of JapanesePatent Application No. 2020-072245 filed on Apr. 14, 2020. The entiredisclosure of the above-identified application, including thespecification, drawings and claims is incorporated herein by referencein its entirety.

TECHNICAL FIELD

The present disclosure relates to a radio frequency module and acommunication device.

BACKGROUND

In mobile communication apparatuses such as a mobile phone thearrangement configuration of circuit elements included in radiofrequency front-end circuits is becoming complex, particularly withdevelopments in multiband technologies.

Patent Literature (PTL) 1 (Japanese Unexamined Patent ApplicationPublication No. 2018-137522) discloses an RF module in which manyelectronic components such as power amplifiers, low-noise amplifiers,and filters are packaged.

SUMMARY Technical Problems

In the above-described conventional technique, many components areintegrated to downsize a module. This integration reduces isolationcharacteristics between components and between lines, therebydeteriorating electrical characteristics (e.g., noise figure (NF), gaincharacteristics) of a radio frequency module.

In view of the above, the present disclosure provides a radio frequencymodule and a communication device that are capable of improvingelectrical characteristics.

Solutions

A radio frequency module including a module substrate including a firstprincipal surface and a second principal surface; a power amplifier; aninductor disposed on the second principal surface and connected to thepower amplifier; and an external connection terminal configured toreceive a power supply voltage. The first external connection terminalis disposed on the second principal surface and connected to the poweramplifier via the inductor.

Advantageous Effects

According to the present disclosure, it is possible to improve theelectrical characteristics of a radio frequency module includingcomponents.

BRIEF DESCRIPTION OF DRAWINGS

These and other advantages and features will become apparent from thefollowing description thereof taken in conjunction with the accompanyingDrawings, by way of non-limiting examples of embodiments disclosedherein.

FIG. 1 is a circuit configuration diagram of a radio frequency moduleaccording to Embodiment 1.

FIG. 2 is a plan view of the radio frequency module according toEmbodiment 1.

FIG. 3 is a cross-sectional view of the radio frequency module accordingto Embodiment 1.

FIG. 4 is a cross-sectional view of a radio frequency module accordingto Embodiment 2.

FIG. 5 is a cross-sectional view of a radio frequency module accordingto another embodiment.

DESCRIPTION OF EMBODIMENTS

Hereinafter, exemplary embodiments of the present disclosure will bedescribed in detail with reference to the drawings. It should be notedthat each of the subsequently described exemplary embodiments shows ageneric or specific example. The numerical values, shapes, materials,elements, the arrangement and connection of the elements, etc. indicatedin the following exemplary embodiments are mere examples, and there arenot intended to limit the present disclosure.

It should be noted that the drawings are schematic diagrams in whichemphasis, omission, or ratio adjustment has been applied where necessaryto illustrate the present disclosure. The drawings are thus notnecessarily exact illustration of the present disclosure, and mayillustrate shapes, positional relationships, and ratios differently fromthe actual ones. In the figures, elements that are substantially thesame are given the same reference signs, and overlapping description maybe omitted or simplified.

In the figures, the x-axis and the y-axis are orthogonal to each otheron a plane parallel to a principal surface of a module substrate. Inaddition, the z-axis is vertical to the principal surface of the modulesubstrate, and a positive direction of the z-axis indicates am upperdirection and a negative direction of the z-axis indicates a downwarddirection.

In a circuit configuration of the present disclosure, the term“connected” means not only a case where elements are directly connectedvia a connection terminal and/or a wiring conductor but also a casewhere elements are electrically connected via another circuit element.The expression “connected between A and B” means connected to both A andB between A and B.

In a component layout of the present disclosure, the expression “a planview of a module substrate” means viewing an object from a z-axispositive side by orthographic projection of the object onto thexy-plane. The expression “A overlaps B in a plan view of a modulesubstrate” means that at least part of a region of A orthographicallyprojected onto the xy-plane overlaps at least part of a region of Borthographically projected onto the xy-plane. Moreover, the expression“a component is disposed on a substrate” means that a component isdisposed on a substrate in contact with each other, that a component isdisposed above a substrate without contact with each other (e.g., acomponent is stacked on another component disposed on a substrate), andfurther that part or all of a component is embedded in a substrate.Furthermore, the expression “a component is disposed on a principalsurface of a substrate” means that a component is disposed on aprincipal surface of a substrate in contact with each other, that acomponent is disposed above a principal surface of a substrate withoutcontact with each other, and further that part or all of a component isembedded in a substrate. Moreover, the expression “A is disposed betweenB and C” means that at least one of line segments joining an arbitrarypoint in B and an arbitrary point in C passes through A.

Furthermore, terms indicating a relationship between elements such as“parallel” and “vertical” mean not only expressions with strict meaningsbut also expressions with meanings including substantially the samerange, for example, an error of several percent.

Embodiment 1 [1.1 Circuit Configurations of Radio Frequency Module 1 andCommunication Device 5]

Circuit configurations of radio frequency module 1 and communicationdevice 5 according to the present embodiment will be described withreference to FIG. 1. FIG. 1 is a circuit configuration diagram of radiofrequency module 1 and communication device 5 according to Embodiment 1.

[1.1.1. Circuit Configuration of Communication Device 5]

First, the circuit configuration of communication device 5 will bedescribed. As shown by FIG. 1, communication device 5 according to thepresent embodiment includes radio frequency module 1, antenna 2, radiofrequency processing circuit (RFIC) 3, and baseband signal processingcircuit (BBIC) 4. Hereinafter, each of the elements of communicationdevice 5 will be described in sequence.

Radio frequency module 1 transfers a radio frequency signal betweenantenna 2 and RFIC 3. The circuit configuration of radio frequencymodule 1 will be described later.

Antenna 2 is connected to antenna connection terminal 100 of radiofrequency module 1, receives a radio frequency signal from the outside,and outputs the radio frequency signal to radio frequency module 1.

RFIC 3 is an example of a signal processing circuit that processes aradio frequency signal. Specifically, RFIC 3 performs, by downconversionetc., signal processing on a radio frequency reception signal inputtedvia a reception path of radio frequency module 1, and outputs thereception signal generated by the signal processing to BBIC 4.Furthermore, RFIC 3 includes a controller that controls switches,low-noise amplifiers, etc. of radio frequency module 1. It should benoted that part or all of the functionality as the controller of RFIC 3may be implemented outside RFIC 3. For example, part or all of thefunctionality may be implemented in BBIC 4 or radio frequency module 1.

BBIC 4 is a baseband signal processing circuit that performs signalprocessing using an intermediate frequency band having a lower frequencythan a radio frequency signal transferred by radio frequency module 1. Asignal processed by BBIC 4 is used as, for example, an image signal forimage display and/or a sound signal for communication via a speaker.

It should be noted that antenna 2 and BBIC 4 are not essential elementsof communication device 5 according to the present embodiment.

[1.1.2. Circuit Configuration of Radio Frequency Module 1]

Next, the circuit configuration of radio frequency module 1 will bedescribed. As shown by FIG. 1, radio frequency module 1 includes poweramplifier 11, inductor 12, capacitor 13, low-noise amplifier 21,switches 51 to 54, duplexers 61 and 62, matching circuits (MNs) 71 and72, antenna connection terminal 100, radio frequency input terminals 111and 112, radio frequency output terminal 121, and power supply terminal131.

Antenna connection terminal 100 is an example of a third externalconnection terminal and is connected to antenna 2.

Radio frequency input terminals 111 and 112 are each an example of thethird external connection terminal, and are terminals for receivingradio frequency transmission signals from the outside of radio frequencymodule 1. For example, radio frequency signals for mutually differentcommunication systems and/or radio frequency signals in mutuallydifferent communication bands can be used as radio frequency signalsreceived from outside by radio frequency input terminals 111 and 112.

A communication system means a communication system constructed using aradio access technology (RAT). In the present embodiment, for example, aFifth Generation New Radio (5G NR) system, a Long Term Evolution (LTE)system, a Wireless Local Area Network (WLAN) system, etc. can be used ascommunication systems. The present embodiment, however, is not limitedto these examples.

A communication band means a frequency band defined in advance by astandards organization (e.g., 3rd Generation Partnership Project (3GPP),the Institute of Electrical and Electronics Engineers (IEEE)), for acommunication system.

It should be noted that the number of radio frequency input terminals isnot limited to two. For example, the number of radio frequency inputterminals may be one or at least three.

Radio frequency output terminal 121 is an example of the third externalconnection terminal and is a terminal for supplying a radio frequencyreception signal to the outside of radio frequency module 1. It shouldbe noted that radio frequency module 1 may include radio frequencyoutput terminals.

Power supply terminal 131 is an example of a first external connectionterminal and is a terminal for receiving power supply voltage from theoutside of radio frequency module 1. Power supply terminal 131 isconnected to power amplifier 11 via inductor 12.

Power amplifier 11 is capable of amplifying radio frequency signalsreceived by radio frequency input terminals 111 and 112. Specifically,power amplifier 11 is capable of amplifying radio frequency signals incommunication band A and/or communication band B inputted from radiofrequency input terminal 111 and/or radio frequency input terminal 112via switch 54.

For example, power amplifier 11 may be a multistage amplifier. In otherwords, power amplifier 11 may include cascade-connected amplifyingelements. In this case, the number of stages of power amplifier 11 isnot particularly limited. Alternatively, power amplifier 11 may includea single-stage configuration. Moreover, power amplifier 11 may convert aradio frequency signal into a differential signal (i.e., a complementarysignal) and amplify the differential signal. Such power amplifier 11 maybe referred to as a differential amplifier. In this case, an output ofpower amplifier 11 may be a differential signal. It should be noted thatthe configuration of power amplifier 11 is not limited to theseexamples.

Inductor 12 is connected between power supply terminal 131 and poweramplifier 11. Inductor 12 is capable of preventing a radio frequencysignal from flowing from a radio frequency signal line for transferringradio frequency signals to a power supply line for supplying powersupply voltage, and is capable of preventing power supply noise fromflowing from the power supply line to the radio frequency signal line.In other words, inductor 12 serves as what is called a choke coil.

Capacitor 13 is connected between a ground and a path connecting powersupply terminal 131 and inductor 12. To put it differently, capacitor 13is connected between a ground and a node between power supply terminal131 and inductor 12. Capacitor 13 is capable of reducing a variation inpower supply voltage. Moreover, as with inductor 12, capacitor 13 iscapable of preventing a radio frequency signal from flowing from a radiofrequency signal line to a power supply line, and is capable ofpreventing power supply noise from flowing from the power supply line tothe radio frequency signal line. In other words, capacitor 13 serves aswhat is called a bypass capacitor or a decoupling capacitor.

Low-noise amplifier 21 is capable of amplifying radio frequency signalsreceived by antenna connection terminal 100. Specifically, low-noiseamplifier 21 is capable of amplifying radio frequency signals incommunication bands A and B inputted from antenna connection terminal100 via switch 53 and duplexers 61 and 62. The radio frequency signalsamplified by low-noise amplifier 21 are outputted to radio frequencyoutput terminal 121. The configuration of low-noise amplifier 21 is notparticularly limited.

Duplexer 61 has a passband including communication band A. Duplexer 61transfers transmission signals and reception signals in communicationband A using frequency-division duplexing (FDD). Duplexer 61 includestransmission filter 61T and reception filter 61R.

Transmission filter 61T is connected between switch 51 and antennaconnection terminal 100. Transmission filter 61T passes, among the radiofrequency transmission signals amplified by power amplifier 11, signalsin a transmission bandwidth of communication band A.

Reception filter 61R is connected between switch 52 and antennaconnection terminal 100. Reception filter 61R passes, among the radiofrequency reception signals inputted from antenna connection terminal100, signals in a reception bandwidth of communication band A.

Duplexer 62 has a passband including communication band B different fromcommunication band A. Duplexer 62 transfers transmission signals andreception signals in communication band B using FDD. Duplexer 62includes transmission filter 62T and reception filter 62R.

Transmission filter 62T is connected between switch 51 and antennaconnection terminal 100. Transmission filter 62T passes, among the radiofrequency transmission signals amplified by power amplifier 11, signalsin a transmission bandwidth of communication band B.

Reception filter 61R is connected between switch 52 and antennaconnection terminal 100. Reception filter 62R passes, among the radiofrequency reception signals inputted from antenna connection terminal100, signals in a reception bandwidth of communication band B.

It should be noted that, for example, an LTE band, a 5G NR band, and aWLAN band can be used as communication bands A and B. The presentembodiment, however, is not limited to these examples.

Switch 51 is connected between transmission filters 61T and 62T andpower amplifier 11. Specifically, switch 51 includes terminals 511 to513. Terminal 511 is connected to the output of power amplifier 11.Terminals 512 and 513 are connected to transmission filters 61T and 62T,respectively. In this connection configuration, switch 51 is capable ofconnecting one of terminals 512 and 513 to terminal 511, based on acontrol signal from RFIC 3, for example. To put it another way, switch51 is capable of switching between connecting power amplifier 11 andtransmission filter 61T and connecting power amplifier 11 andtransmission filter 62T. Switch 51 is configured of, for example, asingle-pole double-throw (SPDT) switch circuit and is referred to as aband selection switch.

Switch 52 is connected between reception filters 61R and 62R andlow-noise amplifier 21. Specifically, switch 52 includes terminals 521to 523. Terminal 521 is connected to the input of low-noise amplifier21. Terminals 522 and 523 are connected to reception filters 61R and62R, respectively. In this connection configuration, switch 52 iscapable of connecting one of terminals 522 and 523 to terminal 521,based on a control signal from RFIC 3, for example. To put it anotherway, switch 52 is capable of switching between connecting low-noiseamplifier 21 and reception filter 61R and connecting low-noise amplifier21 and reception filter 62R. Switch 52 is configured of, for example, anSPDT switch circuit and is referred to as an LNA IN switch.

Switch 53 is connected between antenna connection terminal 100 andduplexers 61 and 62. Specifically, switch 53 includes terminals 531 to533. Terminal 531 is connected to antenna connection terminal 100.Terminals 532 and 533 are connected to duplexers 61 and 62,respectively. In this connection configuration, switch 53 is capable ofconnecting at least one of terminals 532 and 533 to terminal 531, basedon a control signal from RFIC 3, for example. In other words, switch 53is capable of switching between connecting and disconnecting antenna 2and duplexer 61, and switching between connecting and disconnectingantenna 2 and duplexer 62. Switch 53 is configured of, for example, amulti-connection switch circuit and is referred to as an antenna switch.

Switch 54 is connected between radio frequency input terminals 111 and112 and power amplifier 11. Specifically, switch 54 includes terminals541 to 543. Terminal 541 is connected to the input of low-noiseamplifier 11. Terminals 542 and 543 are connected to radio frequencyinput terminals 111 and 112, respectively. In this connectionconfiguration, switch 54 is capable of connecting one of terminals 542and 543 to terminal 541, based on a control signal from RFIC 3, forexample. In other words, switch 54 is capable of switching betweenconnecting radio frequency input terminal 111 and power amplifier 11 andconnecting radio frequency input terminal 112 and power amplifier 11.Switch 54 is configured of, for example, an SPDT switch circuit and isreferred to as a transmission input switch.

Matching circuit 71 is connected between power amplifier 11 andtransmission filters 61T and 62T. Specifically, matching circuit 71 isconnected between the output of power amplifier 11 and terminal 511 ofswitch 51. Matching circuit 71 is capable of performing impedancematching between power amplifier 11 and transmission filters 61T and62T.

Matching circuit 72 is connected between low-noise amplifier 21 andreception filters 61R and 62R. Specifically, matching circuit 72 isconnected between the input of power amplifier 21 and terminal 521 ofswitch 52. Matching circuit 72 is capable of performing impedancematching between power amplifier 21 and reception filters 61R and 62R.

It should be noted that radio frequency module 1 need not include someof the circuit elements shown by FIG. 1. For example, radio frequencymodule 1 may include at least power amplifier 11, inductor 12, and powersupply terminal 131. Radio frequency module 1 need not include the othercircuit elements.

The circuit configuration of radio frequency module 1 makes it possibleto communicate transmission signals and reception signals using FDD. Acircuit configuration of a radio frequency module according to thepresent disclosure is not limited to this example. For example, theradio frequency module according to the present disclosure may include acircuit configuration that makes it possible to communicate transmissionsignals and reception signals using time-division duplexing (TDD), ormay include a circuit configuration that makes it possible tocommunication transmission signals and reception signals using both FDDand TDD.

[1.2 Component Layout of Radio Frequency Module 1]

Next, the component layout of radio frequency module 1 thus configuredwill be described in detail with reference to FIG. 2 and FIG. 3.

FIG. 2 is a plan view of radio frequency module 1 according toEmbodiment 1. In FIG. 2, (a) shows principal surface 91 a of modulesubstrate 91 seen from the z-axis positive side, and (b) shows principalsurface 91 b of module substrate 91 seen from the z-axis positive side.In (a) in FIG. 2, the broken line indicates inductor 12 disposed onprincipal surface 91 b of module substrate 91. FIG. 3 is across-sectional view of radio frequency module 1 according toEmbodiment 1. The cross section of radio frequency module 1 in FIG. 3 isa cross section along line iii-iii in FIG. 2. It should be noted thatFIGS. 2 and 3 show only part of lines and conductors on and withinmodule substrate 91.

As shown by FIGS. 2 and 3, radio frequency module 1 further includesmodule substrate 91, resin components 94 and 95, shield electrode layer96, and post electrodes 150, in addition to the circuit componentsincluded in the circuit shown by FIG. 1. It should be noted that resincomponents 94 and 95 and shield electrode layer 96 are omitted from FIG.2.

Module substrate 91 includes principal surface 91 a and principalsurface 91 b on the opposite sides of module substrate 91. Examples ofmodule substrate 91 include a low temperature co-fired ceramic (LTCC)substrate having a layered structure of dielectric layers, a hightemperature co-fired ceramic (HTCC) substrate, a component-embeddedsubstrate, a substrate having a redistribution layer (RDL), a printedsubstrate, or the like. The present embodiment, however, is not limitedto these examples. Module substrate 91 includes ground electrode pattern92.

Principal surface 91 a is an example of a first principal surface andmay be referred to as an upper surface or a front surface. As shown by(a) in FIG. 2 and FIG. 3, power amplifier 11, duplexers 61 and 62,matching circuits 71 and 72, and resin component 94 are disposed onprincipal surface 91 a.

Each of duplexers 61 and 62 may be, for example, one of a surfaceacoustic wave filter, an acoustic wave filter using bulk acoustic waves(BAWs), an LC resonance filter, and a dielectric filter. Besides,duplexes 61 and 62 are not limited to these examples.

Matching circuits 71 and 72 each include, for example, an inductorand/or a capacitor, and are each configured of a surface mount device(SMD). It should be noted that matching circuits 71 and 72 may beincluded by module substrate 91 and may each be configured of anintegrated passive device (IPD).

Resin component 94 covers the circuit components on principal surface 91a. Resin component 94 has a function of ensuring reliability such asmechanical strengths and moisture resistances of the components onprincipal surface 91 a.

Principal surface 91 b is an example of a second principal surface andmay be referred to as a lower surface or a rear surface. As shown by (b)in FIG. 2 and FIG. 3, inductor 12, capacitor 13, semiconductor device 20including low-noise amplifier 21 and switches 52 and 53, switches 51 and54, resin component 95, and post electrodes 150 are disposed onprincipal surface 91 b.

Inductor 12 is disposed adjacent to post electrodes 150 constitutingpower supply terminal 131, and is connected to power supply terminal 131via line 131L. Specifically, a distance between inductor 12 and postelectrodes 150 constituting power supply terminal 131 is less than orequal to a distance between inductor 12 and each of other postelectrodes 150. Moreover, inductor 12 is disposed closer to postelectrodes 150 constituting power supply terminal 131 than tosemiconductor device 20.

As shown by (a) in FIG. 2, a footprint of inductor 12 at least partiallyoverlaps a footprint of power amplifier 11 in a plan view of modulesubstrate 91. Moreover, inductor 12 does not overlap matching circuit72.

Inductor 12 is connected to power amplifier 11 via conductor 93 disposedin module substrate 91. Via conductor 93 is a conductor filled in a viaprovided in module substrate 91, and a material of via conductor 93 isnot particularly limited. It should be noted that via conductor 93 mayinclude a conductor filled in a through via, and may include conductorsfilled in two blind vias, and an electrode pattern connecting theseconductors in module substrate 91.

Ground electrode pattern 92 is disposed between inductor 12 and matchingcircuit 72. Ground electrode pattern 92 is an example of an electrodepattern and is set to a ground potential. It should be noted that anelectrode pattern need not be ground electrode pattern 92 and not be setto a ground potential.

Semiconductor device 20 is an electronic component in which electroniccircuits are provided on the surface of and inside a semiconductor chip(also referred to as a die), and is also referred to as a semiconductorintegrated circuit. Semiconductor device 20 may be configured of, forexample, a complementary metal-oxide-semiconductor (CMOS), and may bespecifically configured using a silicon on insulator (SOI) structure.This makes it possible to manufacture semiconductor device 20 at lowcost. It should be noted that semiconductor device 20 may include atleast one of GaAs, SiGe, or GaN. This makes it possible to achievehigh-quality semiconductor device 20.

Resin component 95 covers the circuit components on principal surface 91b. Resin component 95 has a function of ensuring reliability such asmechanical strengths and moisture resistances of the components onprincipal surface 91 b.

Post electrodes 150 constitute external connection terminals includingantenna connection terminal 100, radio frequency input terminals 111 and112, radio frequency output terminal 121, power supply terminal 131, andground terminals 141. Post electrodes 150 are disposed on principalsurface 91 b of module substrate 91 and extend vertically from principalsurface 91 b. In addition, post electrodes 150 penetrate through resincomponent 95, and ends of post electrodes 150 are exposed from resincomponent 95. The ends of post electrodes 150 exposed from resincomponent 95 are connected to, for example, input-output terminalsand/or ground electrodes on a mother board disposed on radio frequencymodule 1 in the negative direction of the z-axis.

Post electrodes 150 constituting ground terminals 141 are disposedbetween inductor 12 and semiconductor device 20. Ground terminals 141are each an example of a second external connection terminal and are setto a ground potential. Post electrodes 150 constituting ground terminals141 are connected to, for example, the ground electrodes on the motherboard.

Shield electrode layer 96 is a metal film provided by, for example,spattering, and covers an upper surface and a side surface of resincomponent 94 and side surfaces of module substrate 91 and resincomponent 95. Shield electrode layer 96 is set to a ground potential andinhibits infiltration of external noise into the circuit componentsincluded in radio frequency module 1.

[1.3 Advantageous Effects Etc.]

As stated above, radio frequency module 1 according to the presentembodiment includes: power amplifier 11; inductor 12 connected to poweramplifier 11; power supply terminal 131 that is a first externalconnection terminal which is connected to power amplifier 11 viainductor 12 and is for receiving power supply voltage from outside; andmodule substrate 91 including principal surface 91 a and principalsurface 91 b on opposite sides of module substrate 91. Inductor 12 andpower supply terminal 131 are disposed on principal surface 91 b.

With this configuration, it is possible to dispose inductor 12 and powersupply terminal 131 on the same principal surface, and to readily reducethe length of line 131L between inductor 12 and power supply terminal131. For this reason, it is possible to prevent power supply noiseemitted from line 131L between inductor 12 and power supply terminal 131from interfering other lines, and to improve the electricalcharacteristics of radio frequency module 1.

Moreover, for example, in radio frequency module 1 according to thepresent embodiment, power amplifier 11 may be disposed on principalsurface 91 a.

With this configuration, it is possible to dispose power amplifier 11 onprincipal surface 91 a opposing inductor 12 and power supply terminal131. For this reason, it is possible to prevent power supply noiseemitted from line 131L between inductor 12 and power supply terminal 131from interfering power amplifier 11.

Moreover, for example, in radio frequency module 1 according to thepresent embodiment, the footprint of power amplifier 11 at leastpartially overlaps the footprint of inductor 12 in a plan view of modulesubstrate 91.

With this configuration, it is possible to reduce the length of a linebetween power amplifier 11 and inductor 12. For this reason, it ispossible to reduce a mismatching loss due to a wiring loss or avariation in wiring, and to further improve the electricalcharacteristics of radio frequency module 1.

Moreover, for example, radio frequency module 1 according to the presentembodiment may further include semiconductor device 20 including atleast one of low-noise amplifier 21 or switch 53 connected betweenlow-noise amplifier 21 and antenna connection terminal 100, andsemiconductor device 20 may be disposed on principal surface 91 b.

With this configuration, it is possible to dispose semiconductor device20 the height of which is relatively easily reduced on principal surface91 b of module substrate 91, to reduce the length of power supplyterminal 131 etc., and to reduce the height of entire radio frequencymodule 1.

Moreover, for example, radio frequency module 1 according to the presentembodiment may further include ground terminal 141 that is a secondexternal connection terminal which is set to a ground potential, andground terminal 141 may be disposed on principal surface 91 b, betweeninductor 12 and semiconductor device 20.

With this configuration, ground terminal 141 makes it possible to reducemagnetic field coupling between inductor 12 and semiconductor device 20.For this reason, it is possible to prevent power supply noise frominterfering semiconductor device 20, and to improve the electricalcharacteristics radio frequency module 1.

Moreover, for example, in radio frequency module 1 according to thepresent embodiment, inductor 12 may be disposed closer to power supplyterminal 131 than to semiconductor device 20.

With this configuration, it is possible to surely reduce the length ofline 131L between inductor 12 and power supply terminal 131. For thisreason, it is possible to prevent power supply noise emitted from line131L between inductor 12 and power supply terminal 131 from interferingother lines, and to improve the electrical characteristics of radiofrequency module 1.

Moreover, for example, radio frequency module 1 according to the presentembodiment may further include a plurality of third external connectionterminals disposed on principal surface 91 b, and a distance betweeninductor 12 and power supply terminal 131 may be less than or equal to adistance between inductor 12 and each of the plurality of third externalconnection terminals.

With this configuration, it is possible to surely reduce the length ofline 131L between inductor 12 and power supply terminal 131. For thisreason, it is possible to prevent power supply noise emitted from line131L between inductor 12 and power supply terminal 131 from interferingother lines, and to improve the electrical characteristics of radiofrequency module 1.

Moreover, for example, radio frequency module 1 according to the presentembodiment may further include capacitor 13 connected between a groundand a path connecting inductor 12 and power supply terminal 131.

With this configuration, capacitor 13 makes it possible to reduce avariation in power supply voltage, and it is possible to prevent powersupply noise from flowing into a radio frequency signal line.

Moreover, for example, in radio frequency module 1 according to thepresent embodiment, inductor 12 may be disposed on one of principalsurfaces 91 a and 91 b, and matching circuit 72 may be disposed on theother of principal surfaces 91 a and 91 b.

With this configuration, since it is possible to dispose components onboth sides of module substrate 91, it is possible to downsize radiofrequency module 1, compared to a case in which components are disposedon only one of the sides of module substrate 91. Moreover, when thedownsizing of radio frequency module 1 reduces a physical distancebetween the components, it is possible to dispose inductor 12 connectedto a transmission path and matching circuit 72 connected to a receptionpath on the opposite sides of module substrate 91. Accordingly, it ispossible to reduce magnetic field coupling between inductor 12 andmatching circuit 72, and to improve the electrical characteristics(especially reception performance) of radio frequency module 1.

Moreover, for example, in radio frequency module 1 according to thepresent embodiment, inductor 12 and power supply terminal 131 may bedisposed on principal surface 91 b, and matching circuit 72 may bedisposed on principal surface 91 a.

With this configuration, it is possible to dispose inductor 12 and powersupply terminal 131 on the same principal surface, and to readily reducethe length of line 131L between inductor 12 and power supply terminal131. For this reason, it is possible to prevent power supply noiseemitted from line 131L between inductor 12 and power supply terminal 131from interfering other lines, and to improve the electricalcharacteristics of radio frequency module 1.

Moreover, for example, radio frequency module 1 according to the presentembodiment may further include an electrode pattern in module substrate91, and the electrode pattern may be disposed between inductor 12 andmatching circuit 72.

With this configuration, the electrode pattern disposed between inductor12 and matching circuit 72 makes it possible to reduce magnetic fieldcoupling between inductor 12 and matching circuit 72, and it is possibleto further improve the electrical characteristics of radio frequencymodule 1.

Moreover, for example, in radio frequency module 1 according to thepresent embodiment, the electrode pattern may be ground electrodepattern 92 that is set to a ground potential.

With this configuration, ground electrode pattern 92 disposed betweeninductor 12 and matching circuit 72 makes it possible to reduce magneticfield coupling between inductor 12 and matching circuit 72, and it ispossible to further improve the electrical characteristics of radiofrequency module 1.

Moreover, for example, in radio frequency module 1 according to thepresent embodiment, power amplifier 11 may be disposed on principalsurface 91 a, and low-noise amplifier 21 may be disposed on principalsurface 91 b.

With this configuration, it is possible to dispose power amplifier 11and low-noise amplifier 21 on the opposite sides of module substrate 91,and to improve isolation characteristics between transmission andreception.

Communication device 5 according to the present embodiment includes RFIC3 that processes a radio frequency signal, and radio frequency module 1that transfers the radio frequency signal between RFIC 3 and antenna 2.

With this configuration, communication device 5 can produce the sameadvantageous effects as radio frequency module 1.

Embodiment 2

Next, Embodiment 2 will be described. The present embodiment mainlydiffers from Embodiment 1 in that an inductor is disposed in a modulesubstrate. The following describes the present embodiment with referenceto the drawings, mainly focusing on differences from Embodiment 1.

It should be noted that since a circuit configuration of radio frequencymodule 1A according to the present embodiment is the same as thatdescribed in Embodiment 1 except for including inductor 12A instead ofinductor 12, illustration and description thereof is omitted.

[2.1 Component Layout of Radio Frequency Module 1A]

The circuit configuration of radio frequency module 1A according to thepresent embodiment will be described with reference to FIG. 4. FIG. 4 isa cross-sectional view of radio frequency module 1A according toEmbodiment 2.

In the present embodiment, inductor 12A is disposed in module substrate91. In FIG. 4, inductor 12A is disposed on a principal surface 91 b sidein module substrate 91. In other words, inductor 12A is disposed closerto principal surface 91 b than to principal surface 91 a in modulesubstrate 91.

Specifically, inductor 12A is formed of, for example, a wiring patternin module substrate 91. The present embodiment, however, is not limitedto this example. For example, inductor 12A may be configured of an IPD,and may be embedded in a cavity in module substrate 91.

Since the layout of the other components is the same as that describedin Embodiment 1, description thereof is omitted.

[2.2 Advantageous Effects Etc.]

As stated above, radio frequency module 1A according to the presentembodiment includes: power amplifier 11; inductor 12A connected to poweramplifier 11; power supply terminal 131 that is an external connectionterminal which is connected to power amplifier 11 via inductor 12A andis for receiving power supply voltage from outside; low-noise amplifier21; matching circuit 72 connected to input of low-noise amplifier 21;and module substrate 91 including principal surface 91 a and principalsurface 91 b on opposite sides of module substrate 91. Inductor 12A isdisposed in module substrate 91, and matching circuit 72 is disposed onone of principal surfaces 91 a and 91 b.

With this configuration, since it is possible to dispose componentsinside and on both sides of module substrate 91, it is possible todownsize radio frequency module 1, compared to a case in whichcomponents are disposed on only one of the sides of module substrate 91.Moreover, when the downsizing of radio frequency module 1A reduces aphysical distance between the components, it is possible to disposeinductor 12A connected to a transmission path in module substrate 91,and to dispose matching circuit 72 connected to a reception path onprincipal surface 91 a or 91 b of module substrate 91. Accordingly, itis possible to reduce magnetic field coupling between inductor 12A andmatching circuit 72, and to improve the electrical characteristics(especially reception performance) of radio frequency module 1A.

Moreover, for example, in radio frequency module 1A according to thepresent embodiment, power supply terminal 131 may be disposed onprincipal surface 91 b, inductor 12A may be disposed on a principalsurface 91 b side in module substrate 91, and matching circuit 72 may bedisposed on principal surface 91 a.

With this configuration, it is possible to further reduce magnetic fieldcoupling between inductor 12A and matching circuit 72 by disposinginductor 12A on a principal surface 91 b side in module substrate 91.Moreover, it is possible to readily reduce the length of line 131Lbetween power supply terminal 131 disposed on principal surface 91 b andinductor 12A. For this reason, it is possible to prevent power supplynoise emitted from line 131L between inductor 12A and power supplyterminal 131 from interfering other lines, and to improve the electricalcharacteristics of radio frequency module 1A.

Moreover, for example, radio frequency module 1A according to thepresent embodiment may further include an electrode pattern in modulesubstrate 91, and the electrode pattern may be disposed between inductor12A and matching circuit 72.

With this configuration, the electrode pattern disposed between inductor12A and matching circuit 72 makes it possible to reduce magnetic fieldcoupling between inductor 12A and matching circuit 72, and it ispossible to further improve the electrical characteristics of radiofrequency module 1A.

Moreover, for example, in radio frequency module 1A according to thepresent embodiment, the electrode pattern may be ground electrodepattern 92 that is set to a ground potential.

With this configuration, ground electrode pattern 92 makes it possibleto reduce magnetic field coupling between inductor 12A and matchingcircuit 72, and it is possible to further improve the electricalcharacteristics of radio frequency module 1A.

Moreover, for example, in radio frequency module 1A according to thepresent embodiment, power amplifier 11 may be disposed on principalsurface 91 a, and low-noise amplifier 21 may be disposed on principalsurface 91 b.

With this configuration, it is possible to dispose power amplifier 11and low-noise amplifier 21 on the opposite sides of module substrate 91,and to improve isolation characteristics between transmission andreception.

Communication device 5 according to the present embodiment includes RFIC3 that processes a radio frequency signal, and radio frequency module 1Athat transfers the radio frequency signal between RFIC 3 and antenna 2.

With this configuration, communication device 5 can produce the sameadvantageous effect as radio frequency module 1A.

Other Embodiments

Although the radio frequency modules and the communication devicesaccording to the present disclosure have been described based on theaforementioned embodiments, the radio frequency modules and thecommunication devices according to the present disclosure are notlimited to the aforementioned embodiments. The present disclosureincludes other embodiments achieved by combining any of the elements inthe aforementioned embodiments, variations resulting from variousmodifications to the aforementioned embodiments that may be conceived bythose skilled in the art without departing from the essence of thepresent disclosure, and various devices that include the radio frequencymodules and the communication devices.

For example, in the circuit configurations of the radio frequency moduleand the communication device according to each of the aforementionedembodiments, any circuit element, any line, etc. may be inserted in apath connecting the circuit elements and signal paths disclosed by thefigures. For example, a matching circuit may be connected between switch53 and duplexer 61 and/or duplexer 62.

It should be noted that in the aforementioned embodiments, radiofrequency modules 1 and 1A each include low-noise amplifier 21 andmatching circuit 72. The present disclosure, however, is not limited tothis example. To put it another way, radio frequency module 1 and/orradio frequency module 1A need not include low-noise amplifier 21 and/ormatching circuit 72. Even in this case, it is possible to reduce thelength of line 131L between inductor 12 and/or inductor 12A and powersupply terminal 131, and to improve the electrical characteristics ofradio frequency module 1 and/or radio frequency module 1A.

It should be noted that in the aforementioned embodiments, footprint ofinductors 12 and 12A overlap the footprint of power amplifier 11 in aplan view of module substrate 91. The present disclosure, however, isnot limited to this example. Even when the footprint of inductor 12and/or inductor 12A does not overlap the footprint of power amplifier11, it is possible to reduce the length of line 131L between inductor 12and/or inductor 12A and power supply terminal 131, and to improve theelectrical characteristics of radio frequency module 1 and/or radiofrequency module 1A.

It should be noted that the locations of power amplifier 11 andlow-noise amplifier 21 are not limited to the aforementionedembodiments. For example, low-noise amplifier 21 may be disposed onprincipal surface 91 a, and power amplifier 11 may be disposed onprincipal surface 91 b.

It should be noted that the external connection terminals are composedof post electrodes 150 in the aforementioned embodiments. The presentdisclosure, however, is not limited to this example. For example, theexternal connection terminals may be composed of bump electrodes. FIG. 5is a cross-sectional view of radio frequency module 1B according toanother embodiment. Radio frequency module 1B includes bump electrodes150B instead of post electrodes 150. In this case, radio frequencymodule 1B need not include resin component 95 covering the circuitcomponents on principal surface 91 b.

Although only some exemplary embodiments of the present disclosure havebeen described in detail above, those skilled in the art will readilyappreciate that many modifications are possible in the exemplaryembodiments without materially departing from the novel teachings andadvantages of the present disclosure. Accordingly, all suchmodifications are intended to be included within the scope of thepresent disclosure.

INDUSTRIAL APPLICABILITY

The present disclosure can be widely used in communication apparatusessuch as a mobile phone, as a radio frequency module disposed in a frontend part.

1. A radio frequency module, comprising: a module substrate including afirst principal surface and a second principal surface on opposite sidesof the module substrate; a power amplifier; an inductor disposed on thesecond principal surface and connected to the power amplifier; and afirst external connection terminal configured to receive a power supplyvoltage, wherein the first external connection terminal is disposed onthe second principal surface and connected to the power amplifier viathe inductor.
 2. The radio frequency module of claim 1, wherein thepower amplifier is disposed on the first principal surface.
 3. The radiofrequency module of claim 2, wherein a footprint of the power amplifierat least partially overlaps a footprint of the inductor in a plan viewof the module substrate.
 4. The radio frequency module of claim 1,further comprising: a semiconductor device disposed on the secondprincipal surface and including at least one of a low-noise amplifierand a switch connected between the low-noise amplifier and an antennaconnection terminal.
 5. The radio frequency module of claim 4, furthercomprising: a second external connection terminal that is set to aground potential.
 6. The radio frequency module of claim 5, wherein thesecond external connection terminal is disposed on the second principalsurface, between the inductor and the semiconductor device.
 7. The radiofrequency module of claim 4, wherein the inductor is disposed closer tothe first external connection terminal than to the semiconductor device.8. The radio frequency module of claim 1, further comprising: aplurality of second external connection terminals disposed on the secondprincipal surface
 9. The radio frequency module of claim 7, wherein adistance between the inductor and the first external connection terminalis less than or equal to a distance between the inductor and each of theplurality of second external connection terminals.
 10. The radiofrequency module of claim 1, further comprising: a capacitor connectedbetween a ground and a path connecting the inductor and the firstexternal connection terminal.
 11. A communication device, comprising: asignal processing circuit configured to process a radio frequencysignal; and a radio frequency module configured to transfer the radiofrequency signal between the signal processing circuit and an antenna,wherein the radio frequency module includes a module substrate includinga first principal surface and second principal surface on opposite sidesof the module substrate; a power amplifier; an inductor disposed on thesecond principal surface and connected to the power amplifier; and afirst external connection terminal configured to receive a power supplyvoltage, wherein the first external connection terminal is disposed onthe second principal surface and connected to the power amplifier viathe inductor.
 12. The communication device of claim 11, wherein thepower amplifier is disposed on the first principal surface.
 13. Thecommunication device of claim 12, wherein a footprint of the poweramplifier at least partially overlaps a footprint the inductor in a planview of the module substrate.
 14. The communication device of claim 11,further comprising: a semiconductor device disposed on the secondprincipal surface and including at least one of a low-noise amplifierand a switch connected between the low-noise amplifier and an antennaconnection terminal.
 15. The communication device of claim 14, furthercomprising: a second external connection terminal that is set to aground potential.
 16. The communication device of claim 15, wherein thesecond external connection terminal is disposed on the second principalsurface, between the inductor and the semiconductor device.
 17. Thecommunication device of claim 14, wherein the inductor is disposedcloser to the first external connection terminal than to thesemiconductor device.
 18. The communication device of claim 11, furthercomprising: a plurality of second external connection terminals disposedon the second principal surface, wherein a distance between the inductorand the first external connection terminal is less than or equal to adistance between the inductor and each of the plurality of thirdexternal connection terminals.
 19. The communication device of claim 9,further comprising: a capacitor connected between a ground and a pathconnecting the inductor and the first external connection terminal. 20.A radio frequency module, comprising: a module substrate including afirst principal surface and a second principal surface on opposite sidesof the module substrate a power amplifier disposed on the firstprincipal surface; an inductor disposed on the second principal surfaceand connected to the power amplifier through the module substrate; a viaconductor disposed in the module substrate and configured to connectedto the inductor and the power amplifier; a first external connectionterminal configured to receive a power supply voltage, wherein the firstexternal connection terminal is disposed on the second principal surfaceand connected to the power amplifier via the inductor.